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FMB3904 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FMB3904 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page 4 NPN Multi-Chip General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* T A = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C 1998 Fairchild Semiconductor Corporation Thermal Characteristics T A = 25°C unless otherwise noted Symbol Characteristic Max Units FFB3904 FMB3904 MMPQ3904 PD Total Device Dissipation Derate above 25 °C 300 2.4 700 5.6 1,000 8.0 mW mW/ °C RθJA Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 415 180 125 240 °C/W °C/W °C/W FFB3904 FMB3904 SuperSOT -6 Mark: .1A Dot denotes pin #1 MMPQ3904 C1 B2 E2 E1 B1 C2 pin #1 C1 E1 C2 B1 E2 B2 pin #1 SC70-6 Mark: .1A NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. SOIC-16 Mark: MMPQ3904 C1 C1 C2 C2 C3 C3 C4 C4 E1 B1 E2 B2 E3 B3 E4 B4 pin #1 NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. |
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