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KA5Q0740RT Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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KA5Q0740RT Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page KA5Q0740RT 3 Electrical Characteristics (SFET Part) (Ta=25 °C unless otherwise specified) Note: 1. Pulse test : Pulse width ≤ 300µS, duty ≤ 2% Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 50 µA 400 - - V Zero Gate Voltage Drain Current IDSS VDS = Max, Rating, VGS = 0V - - 200 µA VDS= 0.8*Max., Rating VGS = 0V, TC = 85 °C - - 300 µA Static Drain-source on Resistance (Note) RDS(ON) VGS = 10V, ID = 2.3A - 0.9 1.1 Ω Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz - 710 - pF Output Capacitance Coss - 90 - Reverse Transfer Capacitance Crss - 10 - Turn on Delay Time td(on) VDD= 0.5BVDSS, ID= 7.0A (MOSFET switching time are essentially independent of operating temperature) -15 - nS Rise Time tr - 55 - Turn Off Delay Time td(off) - 55 - Fall Time tf - 50 - Total Gate Charge (Gate-Source+Gate-Drain) Qg VGS = 10V, ID = 7.0A, VDS = 0.5B VDSS (MOSFET Switching time are Essentially independent of operating temperature) -20 26 nC Gate-Source Charge Qgs - 4.0 - Gate-Drain (Miller) Charge Qgd - 7.3 - |
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