©2002 Fairchild Semiconductor Corporation

Rev. A2, November 2002

TO-92

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

* Pulse Test: Pulse Width

≤ 300µs, Duty Cycle ≤ 2.0%

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

20

V

Collector-Base Voltage

20

V

Emitter-Base Voltage

10

V

Collector Current

- Continuous

1.2

A

Operating and Storage Junction Temperature Range

-55 ~ +150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Off Characteristics

Collector-Emitter Breakdown Voltage

20

V

Collector Cutoff Current

100

nA

Emitter Cutoff Current

100

nA

Emitter Cutoff Current

100

nA

On Characteristics *

DC Current Gain

20,000

Collector-Emitter Saturation Voltage

1.0

V

Base-Emitter On Voltage

1.4

V

Symbol

Parameter

Max.

Units

Total Device Dissipation

Derate above 25

°C

625

5.0

mW

mW/

°C

Thermal Resistance, Junction to Case

83.3

°C/W

Thermal Resistance, Junction to Ambient

200

°C/W

MPSA12

NPN Darlington Transistor

• This device is designed for applications requiring extremely high

current gain at currents to 1.0A.

• Sourced from process 05.

• See MPSA14 for characteristics.

1. Emitter 2. Base 3. Collector

1