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ZVN4206GV Datasheet(PDF) 4 Page - Zetex Semiconductors |
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ZVN4206GV Datasheet(HTML) 4 Page - Zetex Semiconductors |
4 / 4 page ZVN4206GV VDS-Drain Source Voltage (Volts) Capacitance v drain-source voltage Q-Charge (nC) Gate charge v gate-source voltage 0 10 8 6 2 0 4 12 14 16 VDS= 20V ID=1.5A 40V 60V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Coss Ciss Crss 0 1020 30 40 50 60 7080 0 120 80 40 160 200 Tj - Junction Temperature (°C) Maximum repetative avalanche energy v Junction Temperature Maximum repetative avalanche current v Junction Temperature Tj - Junction Temperature (°C) Transconductance v drain current ID- Drain Current (Amps) Transconductance v gate-source voltage VGS-Gate Source Voltage (Volts) 0 1 234 5 6 7 8 9 10 VDS=10V 0 300 200 100 400 800 700 600 500 900 1000 01 2 3 4 5 6 7 8 9 10 VDS=10V 0 300 200 100 400 800 700 600 500 900 1000 TYPICAL CHARACTERISTICS |
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