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APT2X101DQ120J Datasheet(HTML) 2 Page - Microsemi Corporation

Part No. APT2X101DQ120J
Description  ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APT2X101DQ120J Datasheet(HTML) 2 Page - Microsemi Corporation

   
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APT2x101_100DQ120J
DYNAMIC CHARACTERISTICS
New Diode Data Sheet By Darel Bidwell
THERMAL AND MECHANICAL CHARACTERISTICS
MIN
TYP
MAX
-
45
-
385
-
1055
-
6
-
-
480
-
5240
-
19
-
-
210
-
9345
-
70
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 100A, diF/dt = -200A/µs
V
R = 800V, TC = 25°C
I
F = 100A, diF/dt = -200A/µs
V
R = 800V, TC = 125°C
I
F = 100A, diF/dt = -1000A/µs
V
R = 800V, TC = 125°C
I
F = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
Package Weight
Maximum Mounting Torque
Symbol
RθJC
V
Isolation
W
T
Torque
MIN
TYP
MAX
.32
2500
1.03
29.2
10
1.1
UNIT
°C/W
Volts
oz
g
lb•in
N•m
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
Note:
D = 0.9
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.0308
0.0693
0.219
0.00101
0.0299
0.309
Dissipated Power
(Watts)
TJ (°C)
TC (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.


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