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MGF0912A Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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MGF0912A Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 3 page Mitsubishi Electric June/2004 MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0912A L & S BAND GaAs FET [ non – matched ] DESCRIPTION The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm • High power gain Gp=10.5dB(TYP.) @f=1.9GHz • High power added efficiency ηadd=38%(TYP.) @f=1.9GHz,Pin=33dBm • Hermetic Package APPLICATION • For L/S Band power amplifiers QUALITY • GG RECOMMENDED BIAS CONDITIONS • Vds=10V • Ids=2.6A • Rg=50Ω Delivery Tray Absolute maximum ratings (Ta=25 °C) Symbol Parameter Ratings Unit VGSO Gate to sourcebreakdown voltage -15 V VGDO Gate to drain breakdown voltage -15 V ID Drain current 10 A IGR Reverse gate current -30 mA IGF Forward gate current 63 mA PT Total power dissipation 53.6 W Tch Cannel temperature 175 °C Tstg Storage temperature -65 to +175 °C Electrical characteristics (Ta=25 °C) Symbol Parameter Test conditions Limits Unit Min. Typ. Max. IDSS Saturated drain current VDS=3V,VGS=0V - -- 10 A VGS(off) Gate to source cut-off voltage VDS=3V,ID=20mA -2.0 - -5.0 V gm Transconductance VDS=3V,ID=2.6A - 3 - S Po Output power VDS=10V,ID=2.6A,f=1.9GHz 40.5 41.5 - dBm ηadd Power added Efficiency Pin=33dBm - 38 - % GLP Linear Power Gain VDS=10V,ID=2.6A,f=1.9GHz 9.5 10.5 - dB Rth(ch-c) Thermal Resistance *1 ∆Vf Method - 2.3 3 °C/W *1:Channel to case / Above parameters, ratings, limits are subject to change. (1) GATE (2) SOURCE (FLANGE) (3) DRAIN GF-7 14.0 9.0±0.2 ③ 5.0 1.9±0.4 OUTLINE DRAWING ② φ2.2 0.6±0.2 ② Unit : millimeters ① |
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Similar Description - MGF0912A |
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