PEMD6 datasheet(5/8 Pages) PHILIPS

Part #	PEMD6

Description	NPN/PNP resistor-equipped transistors; R1 = 4.7 kohm, R2 = open

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 8 page

2001 Nov 07

5

Philips Semiconductors

Product speciﬁcation

NPN/PNP resistor-equipped transistors;

R1 = 4.7 k

Ω, R2 = open

PEMD6

handbook, halfpage

103

102

MHC024

10−1

110

102

hFE

IC (mA)

(1)

(3)

(2)

Fig.3

DC current gain as a function of collector

current; typical values.

TR1 (NPN); VCE =5V.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

102

10

103

MHC025

10−1

110

VCEsat

(mV)

IC (mA)

102

(1)

(2)

(3)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

TR1 (NPN); IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

103

102

10

MHC026

−10−1

−1

−10

hFE

IC (mA)

−102

(1)

(2)

(3)

Fig.5

DC current gain as a function of collector

current; typical values.

TR2 (PNP); VCE = −5V.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

−10

−102

−103

MHC027

−10−1

−1

−10

VCEsat

(mV)

IC (mA)

−102

(1)

(2)

(3)

Fig.6

Collector-emitter saturation voltage as a

function of collector current; typical values.

TR2 (PNP); IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

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