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PEMD6 Datasheet(PDF) 5 Page - NXP Semiconductors |
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PEMD6 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 8 page 2001 Nov 07 5 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 4.7 k Ω, R2 = open PEMD6 handbook, halfpage 103 102 MHC024 10−1 110 102 hFE IC (mA) (1) (3) (2) Fig.3 DC current gain as a function of collector current; typical values. TR1 (NPN); VCE =5V. (1) Tamb = 100 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage 102 10 103 MHC025 10−1 110 VCEsat (mV) IC (mA) 102 (1) (2) (3) Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. TR1 (NPN); IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage 103 102 10 MHC026 −10−1 −1 −10 hFE IC (mA) −102 (1) (2) (3) Fig.5 DC current gain as a function of collector current; typical values. TR2 (PNP); VCE = −5V. (1) Tamb = 100 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage −10 −102 −103 MHC027 −10−1 −1 −10 VCEsat (mV) IC (mA) −102 (1) (2) (3) Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values. TR2 (PNP); IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. |
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