PEMH10 datasheet(4/8 Pages) PHILIPS

Part #	PEMH10

Description	NPN resistor-equipped transistors; R1 = 2.2 kohm, R2 = 47 kohm

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 8 page

2001 Oct 22

4

Philips Semiconductors

Preliminary speciﬁcation

NPN resistor-equipped transistors;

R1 = 2.2 k

Ω, R2=47kΩ

PEMH10

CHARACTERISTICS

Tamb =25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor

ICBO

collector-base cut-off current

VCB =50V; IE =0

−−

100

nA

ICEO

collector-emitter cut-off current

VCE =50V; IB =0

−−

1

µA

VCE =30V; IB = 0; Tj = 150 °C

−−

50

µA

IEBO

emitter-base cut-off current

VEB =5V; IC =0

−−

180

µA

hFE

DC current gain

VCE =5V; IC =10mA

100

−−

VCEsat

collector-emitter saturation voltage

IC = 5 mA; IB = 0.25 mA

−−

100

mV

Vi(off)

input off voltage

VCE =5V; IC = 100 µA

−

0.6

0.5

V

Vi(on)

input on voltage

VCE = 0.3 V; IC = 5 mA

1.1

0.75

−

V

R1

input resistor

1.54

2.2

2.86

k

Ω

resistor ratio

17

21

26

Cc

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−−

2.5

pF

R2

R1

--------

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