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MC-7847-KC Datasheet(PDF) 1 Page - California Eastern Labs |
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MC-7847-KC Datasheet(HTML) 1 Page - California Eastern Labs |
1 / 3 page NEC's 870 MHz GaAs CATV 25 dB POWER DOUBLER AMPLIFIER OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE H02 FEATURES • GaAs ACTIVE DEVICES • LOW DISTORTION • HIGH LINEAR GAIN: MC-7847-KC - GL = 25 dB MIN at f = 870 MHz • LOW RETURN LOSS • LOW GAIN CHANGE OVER TEMPERATURE • SPECIFIED FOR 79, 110, and 132 CHANNELS PERFORMANCE • HIGH RELIABILITY AND RUGGEDNESS: Withstands environmental extremes as well as Silicon devices (Surge, ESD, Etc.) VDD 9 1 In Out Gnd 2 3 7 8 2.54 ±0.38 21.5 MAX 6-32 unc 2B 2.54±0.25 1 2 3 5 7 8 9 4.19±0.13 14.85 MAX 4.25 + 0.25 - 0.35 4.0±0.25 5 10.75 ±0.25 27.5 MAX 38.1±0.25 45.08 MAX 0.51±0.05 0.51±0.05 3.2 MAX A 0.38.. A 25.4±0.25 19.05±0.38 8.1 MAX 2.5 6.3 ±0.05 NEC's MC-7847-KC is a GaAs Multi-Chip Modules designed for use as output stages in CATV applications up to 870 MHz. This is a high gain device offering 25 dB minimum gain at 870 MHz. Because this unit is a GaAs device it has low dis- tortion, low noise figure, and low return loss across the entire frequency band. The MC-7847-KC is similar to NEC's standard push-pull devices, but the higher current allows for better distortion performance, especially X-mod. Like the previous generation of products, these devices sur- vive such hazards as surge and ESD as well as their silicon competitors, but deliver superior performance with low DC current required. All devices are assembled and tested using fully automated equipment to maximize consistency in part to part performance, and reliability is assured by NEC's stringent quality and process control procedures. These parts come in industry compatible hybrid packages. APPLICATIONS • CATV HEADEND SYSTEMS • CATV OPTICAL NODES • CATV DISTRIBUTION AMPS MC-7847-KC PART NUMBER MC-7847-KC TEST CONDITIONS SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX BW Frequency Range MHz 50 – 870 GL Linear Gain dB 25.0 – 26.0 f = 870 MHz S Gain Slope dB 1.0 1.4 1.8 f = 40 to 870 MHz Gf Gain Flatness dB – – 0.6 40 to 870 MHz; Peak to Valley NF Noise Figure 1 Noise Figure 2 dB – – 5.5 f = 50 MHz – – 6.0 f = 870 MHz RLi Input Return Loss dB 20.0 – – 40 to 160MHz 20.0 – – 160 to 320 MHz 19.5 – – 320 to 640 MHz 17.0 – – 640 to 870 MHz RLO Output Return Loss mA 20.0 – – 40 to 160MHz IDD Operating Current mA 350 – 420 RF OFF CTB Composite Triple Beat dBc – – -60 110 Channels VOUT = 50 dBmV at 745.25 MHz, 10 dB tilted across the band XMod Cross Modulation1 dBc – – -55 CSO Composite Second Order dBc – – -63 ELECTRICAL CHARACTERISTICS (TA= 30±5 °C, VDD = 24 V, ZS = ZL = 75 Ω) 1. Measured per US standard methods and procedures (using selective level meter). DESCRIPTION Date Published January 2007 |
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