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IRF7329PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF7329PBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 9 page IRF7329PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V trr Reverse Recovery Time ––– 50 75 ns TJ = 25°C, IF = -2.0A Qrr Reverse Recovery Charge ––– 48 72 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics -37 -2.0 A Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. S D G Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.007 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 17 VGS = -4.5V, ID = -9.2A ––– 21 VGS = -2.5V, ID = -7.4A ––– 30 VGS = -1.8V, ID = -4.6A VGS(th) Gate Threshold Voltage -0.40 ––– -0.90 V VDS = VGS, ID = -250µA gfs Forward Transconductance 25 ––– ––– S VDS = -10V, ID = -9.2A ––– ––– -1.0 VDS = -9.6V, VGS = 0V ––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8.0V Qg Total Gate Charge ––– 38 57 ID = -9.2A Qgs Gate-to-Source Charge ––– 6.8 10 nC VDS = -6.0V Qgd Gate-to-Drain ("Miller") Charge ––– 8.1 12 VGS = -4.5V td(on) Turn-On Delay Time ––– 10 ––– VDD = -6.0V tr Rise Time ––– 8.6 ––– ID = -1.0A td(off) Turn-Off Delay Time ––– 340 ––– RD = 6.0Ω tf Fall Time ––– 260 ––– VGS = -4.5V Ciss Input Capacitance ––– 3450 ––– VGS = 0V Coss Output Capacitance ––– 1000 ––– pF VDS = -10V Crss Reverse Transfer Capacitance ––– 640 ––– ƒ = 1.0MHz IGSS µA m Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns When mounted on 1 inch square copper board. |
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