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IRF7329PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF7329PBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 9 page Parameter Max. Units VDS Drain- Source Voltage -12 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -9.2 ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -7.4 A IDM Pulsed Drain Current -37 PD @TA = 25°C Power Dissipation 2.0 PD @TA = 70°C Power Dissipation 1.3 Linear Derating Factor 16 mW/°C VGS Gate-to-Source Voltage ± 8.0 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C 10/7/04 www.irf.com 1 IRF7329PbF HEXFET® Power MOSFET PD - 95042 Absolute Maximum Ratings W Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 62.5 °C/W Thermal Resistance VDSS RDS(on) max (mW) ID 17@VGS = -4.5V ± 9.2A -12V 21@VGS = -2.5V ± 7.4A 30@VGS = -1.8V ± 4.6A Description l Trench Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Low Profile (<1.8mm) l Available in Tape & Reel l Lead-Free New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique s. SO-8 D1 D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 |
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