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PHP1025 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. PHP1025
Description  P-channel enhancement mode MOS transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHP1025 Datasheet(HTML) 4 Page - NXP Semiconductors

  PHP1025 Datasheet HTML 1Page - NXP Semiconductors PHP1025 Datasheet HTML 2Page - NXP Semiconductors PHP1025 Datasheet HTML 3Page - NXP Semiconductors PHP1025 Datasheet HTML 4Page - NXP Semiconductors PHP1025 Datasheet HTML 5Page - NXP Semiconductors PHP1025 Datasheet HTML 6Page - NXP Semiconductors PHP1025 Datasheet HTML 7Page - NXP Semiconductors PHP1025 Datasheet HTML 8Page - NXP Semiconductors  
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1998 Feb 18
4
Philips Semiconductors
Objective specification
P-channel enhancement mode
MOS transistor
PHP1025
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = −10 µA
−12
−−
V
VGSth
gate-source threshold voltage
VGS =VDS; ID = −1mA
−0.4
−−
V
IDSS
drain-source leakage current
VGS = 0; VDS = −9.6 V
−−−100
nA
IGSS
gate leakage current
VGS = ±8 V; VDS =0
−−±100
nA
RDSon
drain-source on-state resistance
VGS = −4.5 V; ID = −5A
−−
23
m
VGS = −2.5 V; ID = −5A
−−
25
m
VGS = −1.8 V; ID = −2.5 A
−−
29
m
Ciss
input capacitance
VGS = 0; VDS = −9.6 V; f = 1 MHz −
tbf
pF
Coss
output capacitance
VGS = 0; VDS = −9.6 V; f = 1 MHz −
tbf
pF
Crss
reverse transfer capacitance
VGS = 0; VDS = −9.6 V; f = 1 MHz −
tbf
pF
QG
total gate charge
VGS = −6 V; VDD = −6V;
ID = −5 A; Tamb =25 °C
tbf
pC
QGS
gate-source charge
VDD = −6 V; ID = −5A
Tamb =25 °C
tbf
pC
QGD
gate-drain charge
VDD = −6 V; ID = −5A
Tamb =25 °C
tbf
pC
Switching times
td(on)
turn-on delay time
VGS =0to −6 V; VDD = −6V;
ID = −1 A; Rgen =6 Ω
tbf
ns
tf
fall time
tbf
ns
ton
turn-on switching time
tbf
ns
td(off)
turn-off delay time
VGS = −6to0V; VDD = −6V;
ID = −1 A; Rgen =6 Ω
tbf
ns
tr
rise time
tbf
ns
toff
turn-off switching time
tbf
ns
Source-drain diode
VSD
source-drain diode forward voltage VGD = 0; IS = −1.25 A
−−−1.3
V
trr
reverse recovery time
IS = −1.25 A; di/dt = 100 A/µs
tbf
ns


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