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PHP1035 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. PHP1035
Description  P-channel enhancement mode MOS transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHP1035 Datasheet(HTML) 2 Page - NXP Semiconductors

  PHP1035 Datasheet HTML 1Page - NXP Semiconductors PHP1035 Datasheet HTML 2Page - NXP Semiconductors PHP1035 Datasheet HTML 3Page - NXP Semiconductors PHP1035 Datasheet HTML 4Page - NXP Semiconductors PHP1035 Datasheet HTML 5Page - NXP Semiconductors PHP1035 Datasheet HTML 6Page - NXP Semiconductors PHP1035 Datasheet HTML 7Page - NXP Semiconductors PHP1035 Datasheet HTML 8Page - NXP Semiconductors  
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1998 Feb 18
2
Philips Semiconductors
Preliminary specification
P-channel enhancement mode
MOS transistor
PHP1035
FEATURES
• Very low RDSon
• High-speed switching
• No secondary breakdown
• Direct interface to C-MOS, TTL, etc.
APPLICATIONS
• Power management
• DC-DC converters
• General purpose switch.
DESCRIPTION
P-channel enhancement mode MOS transistor in an 8-pin
SOT96-1 (SO8) SMD plastic package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT96-1 (SO8)
PIN
SYMBOL
DESCRIPTION
1
s
source
2
s
source
3
s
source
4
g
gate
5
d
drain
6
d
drain
7
d
drain
8
d
drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
4
5
1
8
Top view
MAM398
s
d
g
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
−−30
V
VSD
source-drain diode forward voltage
IS = −1.25 A; VGD =0
−−1.3
V
VGSO
gate-source voltage (DC)
open drain
−±20
V
VGSth
gate-source threshold voltage
ID = −1 mA; VDS =VGS
−1
V
ID
drain current (DC)
Ts =80 °C
−−8A
RDSon
drain-source on-state resistance
ID = −4 A; VGS = −10 V
35
m
Ptot
total power dissipation
Ts =80 °C
4W


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