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PHP1035 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. PHP1035
Description  P-channel enhancement mode MOS transistor
Download  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHP1035 Datasheet(HTML) 3 Page - NXP Semiconductors

  PHP1035 Datasheet HTML 1Page - NXP Semiconductors PHP1035 Datasheet HTML 2Page - NXP Semiconductors PHP1035 Datasheet HTML 3Page - NXP Semiconductors PHP1035 Datasheet HTML 4Page - NXP Semiconductors PHP1035 Datasheet HTML 5Page - NXP Semiconductors PHP1035 Datasheet HTML 6Page - NXP Semiconductors PHP1035 Datasheet HTML 7Page - NXP Semiconductors PHP1035 Datasheet HTML 8Page - NXP Semiconductors  
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1998 Feb 18
3
Philips Semiconductors
Preliminary specification
P-channel enhancement mode
MOS transistor
PHP1035
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 27.5 K/W.
4. Device mounted on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 90 K/W.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
−−30
V
VGSO
gate-source voltage (DC)
open drain
−±20
V
ID
drain current (DC)
Ts =80 °C; note 1
−−8A
IDM
peak drain current
note 2
−−32
A
Ptot
total power dissipation
Ts =80 °C
4W
Tamb =25 °C; note 3
2.78
W
Tamb =25 °C; note 4
1.16
W
Tstg
storage temperature
−55
+150
°C
Tj
operating junction temperature
−55
+150
°C
Source-drain diode
IS
source current (DC)
Ts =80 °C
−−3A
ISM
peak pulsed source current
note 2
−−12
A
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
17.5
K/W


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