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PHP109 Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. PHP109
Description  P-channel enhancement mode MOS transistor
Download  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHP109 Datasheet(HTML) 5 Page - NXP Semiconductors

  PHP109 Datasheet HTML 1Page - NXP Semiconductors PHP109 Datasheet HTML 2Page - NXP Semiconductors PHP109 Datasheet HTML 3Page - NXP Semiconductors PHP109 Datasheet HTML 4Page - NXP Semiconductors PHP109 Datasheet HTML 5Page - NXP Semiconductors PHP109 Datasheet HTML 6Page - NXP Semiconductors PHP109 Datasheet HTML 7Page - NXP Semiconductors PHP109 Datasheet HTML 8Page - NXP Semiconductors PHP109 Datasheet HTML 9Page - NXP Semiconductors Next Button
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1997 Jun 18
5
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP109
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = −10 µA
−30
−−
V
VGSth
gate-source threshold voltage
VGS =VDS; ID = −1mA
−1
−−2.8
V
IDSS
drain-source leakage current
VGS = 0; VDS = −24 V
−−−100
nA
IGSS
gate leakage current
VGS = ±20 V; VDS =0
−−±100
nA
RDSon
drain-source on-state resistance
VGS = −4.5 V; ID = −1.25 A
−−
0.15
VGS = −10 V; ID = −2.5 A
−−
0.09
Ciss
input capacitance
VGS = 0; VDS = −24 V; f = 1 MHz
825
pF
Coss
output capacitance
VGS = 0; VDS = −24 V; f = 1 MHz
350
pF
Crss
reverse transfer capacitance
VGS = 0; VDS = −24 V; f = 1 MHz
150
pF
QG
total gate charge
VGS = −10 V; VDD = −15 V;
ID = −2.5 A
30
40
nC
QGS
gate-source charge
VGS = −10 V; VDD = −15 V;
ID = −2.5 A
3
nC
QGD
gate-drain charge
VGS = −10 V; VDD = −15 V;
ID = −2.5 A
12
nC
Switching times (see Fig.11)
td(on)
turn-on delay time
VGS =0to −10 V; VDD = −15 V;
ID = −1 A; RL =15 Ω; Rgen =6 Ω
7
ns
tf
fall time
10
ns
ton
turn-on switching time
17
35
ns
td(off)
turn-off delay time
VGS = −10 to 0 V; VDD = −15 V;
ID = −1 A; RL =15 Ω; Rgen =6 Ω
60
ns
tr
rise time
40
ns
toff
turn-off switching time
100
200
ns
Source-drain diode
VSD
source-drain forward voltage
VGD = 0; IS = −1.25 A
−−−1.3
V
trr
reverse recovery time
IS = −1.25 A; di/dt = 100 A/µs
70
ns


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