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PHP109 Datasheet(PDF) 6 Page - NXP Semiconductors

Part No. PHP109
Description  P-channel enhancement mode MOS transistor
Download  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHP109 Datasheet(HTML) 6 Page - NXP Semiconductors

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1997 Jun 18
6
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP109
Fig.5
Gate-source voltage as a function of total
gate charge; typical values.
VDD = −15 V: ID = −2.5 A.
handbook, halfpage
MGD386
−8
−6
−4
−2
0
0
−5
−10
−15
−20
−30
−25
−10
Qg (nC)
VGS
(V)
Fig.6 Output characteristics; typical values.
handbook, halfpage
0
−10
−2
−4
−4
−8
−12
−16
−20
−24
−6
−8
0
MGD384
−4 V
−3.5 V
−3 V
−2.5 V
VDS (V)
ID
(A)
VGS =
−10 V
−7.5 V
−5 V
Tj =25 °C.
Fig.7 Transfer characteristics; typical values.
VDS = −10 V; Tj =25 °C.
handbook, halfpage
0
−20
−16
−12
−8
−2
−4
−6
−8
−4
0
MGD385
VGS (V)
ID
(A)
Fig.8
Source current as a function of source-drain
diode forward voltage; typical values.
VGD =0.
(1) Tj = 150 °C.
(2) Tj =25 °C.
(3) Tj = −65 °C.
handbook, halfpage
−20
0
(1)
(2)
VSD (V)
−0.8
−0.4
−2.4
−2.0
0
ISD
(A)
MGD387
−1.6
−1.2
−4
−8
−12
−16
(3)


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