PHP109 datasheet(2/12 Pages) PHILIPS

Part #	PHP109

Description	P-channel enhancement mode MOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1997 Jun 18

2

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode

MOS transistor

PHP109

FEATURES

• High-speed switching

• No secondary breakdown

• Very low on-resistance.

APPLICATIONS

• Motor and actuator driver

• Power management

• Synchronized rectification.

DESCRIPTION

P-channel enhancement mode MOS transistor in an 8-pin

plastic SO8 (SOT96-1) package.

CAUTION

The device is supplied in an antistatic package.

The gate-source input must be protected against static

discharge during transport or handling.

PINNING - SO8 (SOT96-1)

SYMBOL

DESCRIPTION

1

n.c.

not connected

2

s

source

3

s

source

4

g

gate

5

d

drain

6

d

drain

7

d

drain

8

d

drain

Fig.1 Simplified outline and symbol.

handbook, halfpage

d

MAM115

1

4

5

8

d

s

n.c.

g

s

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage (DC)

−−30

V

VSD

source-drain diode forward voltage

IS = −1.25 A

−−1.3

V

VGS

gate-source voltage (DC)

−±20

V

VGSth

gate-source threshold voltage

ID = −1 mA; VDS =VGS

−1

−2.8

V

ID

drain current (DC)

Ts =80 °C

−−5A

RDSon

drain-source on-state resistance

ID = −2.5 A; VGS = −10 V

−

0.09

Ω

Ptot

total power dissipation

Ts =80 °C

−

4W

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