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PHP109 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. PHP109
Description  P-channel enhancement mode MOS transistor
Download  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHP109 Datasheet(HTML) 3 Page - NXP Semiconductors

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1997 Jun 18
3
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP109
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Ts is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Value based on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 27.5 K/W.
4. Value based on a printed-circuit board with a Rth a-tp (ambient to tie-point) of 90 K/W.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
−−30
V
VGS
gate-source voltage (DC)
−±20
V
ID
drain current (DC)
Ts =80 °C; note 1
−−5A
IDM
peak drain current
note 2
−−20
A
Ptot
total power dissipation
Ts =80 °C
4W
Tamb =25 °C; note 3
2.7
W
Tamb =25 °C; note 4
1.15
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−65
+150
°C
Source-drain diode
IS
source current (DC)
Ts =80 °C
−−3A
ISM
peak pulsed source current
note 2
−−12
A
Fig.2 Power derating curve.
handbook, halfpage
0
200
10
0
2
4
6
8
MGD381
50
100
150
Ptot
(W)
Ts (
oC)
δ = 0.01; TS =80 °C.
(1) RDSon limitation.
Fig.3 SOAR.
handbook, halfpage
MGD382
−1
−1
−10
ID
(A)
−10
−102
−10−1
−10−1
−102
1 ms
10 ms
100 ms
100
µs
DC
(1)
VDS (V)
tp =
10
µs
tp
tp
T
P
t
T
δ =


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