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PHP125 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. PHP125
Description  P-channel enhancement mode MOS transistor
Download  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHP125 Datasheet(HTML) 2 Page - NXP Semiconductors

  PHP125 Datasheet HTML 1Page - NXP Semiconductors PHP125 Datasheet HTML 2Page - NXP Semiconductors PHP125 Datasheet HTML 3Page - NXP Semiconductors PHP125 Datasheet HTML 4Page - NXP Semiconductors PHP125 Datasheet HTML 5Page - NXP Semiconductors PHP125 Datasheet HTML 6Page - NXP Semiconductors PHP125 Datasheet HTML 7Page - NXP Semiconductors PHP125 Datasheet HTML 8Page - NXP Semiconductors PHP125 Datasheet HTML 9Page - NXP Semiconductors Next Button
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1997 Jun 18
2
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP125
FEATURES
• High-speed switching
• No secondary breakdown
• Very low on-resistance.
APPLICATIONS
• Motor and actuator driver
• Power management
• Synchronized rectification.
DESCRIPTION
P-channel enhancement mode MOS transistor in an 8-pin
plastic SO8 (SOT96-1) package.
PINNING - SO8 (SOT96-1)
PIN
SYMBOL
DESCRIPTION
1
n.c.
not connected
2
s
source
3
s
source
4
g
gate
5
d
drain
6
d
drain
7
d
drain
8
d
drain
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline and symbol.
handbook, halfpage
d
MAM115
1
4
5
8
d
d
d
s
n.c.
g
s
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
−−30
V
VSD
source-drain diode forward voltage
IS = −1.25 A
−−1.6
V
VGS
gate-source voltage (DC)
−±20
V
VGSth
gate-source threshold voltage
ID = −1 mA; VDS =VGS
−1
−2.8
V
ID
drain current (DC)
Ts =80 °C
−−2.5
A
RDSon
drain-source on-state resistance
ID = −1 A; VGS = −10 V
0.25
Ptot
total power dissipation
Ts =80 °C
2.8
W


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