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MBR2535CTLG Datasheet(PDF) 2 Page - ON Semiconductor |
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MBR2535CTLG Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page MBR2535CTL http://onsemi.com 2 MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 35 V Average Rectified Forward Current (TC = 142°C per Diode) (TC = 142°C per Device) IF(AV) 12.5 25 A Peak Repetitive Forward Current, per Leg (Sq Wave, 20 kHz, TC = 139°C) IFRM 25 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +150 °C Operating Junction Temperature (Note 1) TJ −65 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ ms Controlled Avalanche Energy Waval 20 mJ Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Conditions Symbol Max Unit Maximum Thermal Resistance, Junction−to−Case Min. Pad RqJC 2.0 °C/W Maximum Thermal Resistance, Junction−to−Ambient Min. Pad RqJA 75.0 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typical Max Unit Instantaneous Forward Voltage (Note 2) (iF = 25 Amps, Tj = 25°C) (iF = 12.5 Amps, Tj = 25°C) (iF = 12.5 Amps, Tj = 125°C) vF − − − 0.51 0.41 0.33 0.55 0.47 0.41 V Instantaneous Reverse Current (Note 2) (Rated dc Voltage, Tj = 25 °C) (Rated dc Voltage, Tj = 125 °C) iR − − 0.8 300 5.0 500 mA 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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