MBR2535CTLG datasheet(2/4 Pages) ONSEMI

Part #	MBR2535CTLG

Description	SWITCHMODE Power Rectifier

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Manufacturer	ONSEMI [ON Semiconductor]

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MBR2535CTL

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MAXIMUM RATINGS (Per Leg)

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

35

V

Average Rectified Forward Current

(TC = 142°C per Diode)

(TC = 142°C per Device)

IF(AV)

12.5

25

A

Peak Repetitive Forward Current, per Leg (Sq Wave, 20 kHz, TC = 139°C)

IFRM

25

A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)

IFSM

150

A

Peak Repetitive Reverse Surge Current (2.0

ms, 1.0 kHz)

IRRM

1.0

A

Storage Temperature Range

Tstg

−65 to +150

°C

Operating Junction Temperature (Note 1)

TJ

−65 to +150

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/

ms

Controlled Avalanche Energy

Waval

20

mJ

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Characteristic

Conditions

Symbol

Max

Unit

Maximum Thermal Resistance, Junction−to−Case

Min. Pad

RqJC

2.0

°C/W

Maximum Thermal Resistance, Junction−to−Ambient

Min. Pad

RqJA

75.0

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Typical

Max

Unit

Instantaneous Forward Voltage (Note 2)

(iF = 25 Amps, Tj = 25°C)

(iF = 12.5 Amps, Tj = 25°C)

(iF = 12.5 Amps, Tj = 125°C)

vF

−

0.51

0.41

0.33

0.55

0.47

0.41

V

Instantaneous Reverse Current (Note 2)

(Rated dc Voltage, Tj = 25

°C)

(Rated dc Voltage, Tj = 125

°C)

iR

−

0.8

300

5.0

500

mA

2. Pulse Test: Pulse Width = 300

ms, Duty Cycle ≤ 2.0%.

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