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SD56120 Datasheet(PDF) 1 Page - STMicroelectronics |
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SD56120 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 15 page July 2006 Rev 3 1/15 15 SD56120 RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100W with 14dB gain @ 860MHz ■ BeO free package Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity. Pin connection M246 Epoxy sealed 1-2 Drain 4-5 Gate 3 Source 12 4 5 www.st.com Order codes Part number Package Branding SD56120 M246 TSD56120 |
Similar Part No. - SD56120_06 |
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Similar Description - SD56120_06 |
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