SD56120_06 datasheet(3/15 Pages) STMICROELECTRONICS

Part #	SD56120

Description	RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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SD56120

Electrical data

3/15

1

Electrical data

1.1

Maximum ratings

1.2

Thermal data

Table 1.

Absolute maximum ratings (TCASE = 25°C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

± 20

V

ID

Drain Current

14

A

PDISS

Power Dissipation (@ Tc = 70°C)

217

W

TJ

Max. Operating Junction Temperature

200

°C

TSTG

Storage Temperature

-65 to +150

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

RthJC

Junction - case thermal resistance

0.6

°C/W

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SD56120 Datasheet(PDF) 3 Page - STMicroelectronics

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