PHW20N50E datasheet(4/7 Pages) PHILIPS

Part #	PHW20N50E

Description	PowerMOS transistors Avalanche energy rated

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

PowerMOS transistors

PHW20N50E

Avalanche energy rated

Fig.7. Typical transfer characteristics.

I

D = f(VGS); parameter Tj

Fig.8. Typical transconductance.

g

fs = f(ID); parameter Tj

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 10 A; VGS = 10 V

Fig.10. Gate threshold voltage.

V

GS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS

Fig.11. Sub-threshold drain current.

I

D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

Fig.12. Typical capacitances, C

iss, Coss, Crss.

C = f(V

DS); conditions: VGS = 0 V; f = 1 MHz

PHW20N50E

0

5

10

15

20

25

30

01

234

56

78

Gate-source voltage, VGS (V)

Drain current, ID (A)

VDS > ID X RDS(ON)

Tj = 25 C

150 C

-60

-40

-20

0

20

40

60

80

100

120

140

Tj / C

VGS(TO) / V

4

3

2

1

0

max.

typ.

min.

PHW20N50E

0

2

4

6

8

10

12

14

16

18

20

0

5

10

15

20

25

30

Drain current, ID (A)

Transconductance, gfs (S)

VDS > ID X RDS(ON)

Tj = 25 C

150 C

0

1

2

3

4

VGS / V

ID / A

1E-01

1E-02

1E-03

1E-04

1E-05

1E-06

SUB-THRESHOLD CONDUCTION

typ

2 %

98 %

-60

-40

-20

0

20

40

60

80

100 120 140

Tj / C

Normalised RDS(ON) = f(Tj)

2

1

0

a

PHW20N50E

100

1000

10000

0.1

1

10

100

Drain-Source Voltage, VDS (V)

Capacitances, Ciss, Coss, Crss (pF)

Ciss

Coss

Crss

December 1998

4

Rev 1.000

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