Philips Semiconductors

PHX18NQ20T

N-channel FET

Product specification

Rev. 01 — 28 August 2000

2 of 15

9397 750 07452

© Philips Electronics N.V. 2000. All rights reserved.

5.

Quick reference data

6.

Limiting values

Table 2:

Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

drain-source voltage (DC)

−

200

V

drain current (DC)

−

8.2

A

total power dissipation

−

30

W

junction temperature

−

150

°C

drain-source on-state resistance

130

180

m

Ω

−

450

m

Ω

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

drain-source voltage (DC)

−

200

V

drain-gate voltage (DC)

200

V

gate-source voltage (DC)

−±20

V

drain current (DC)

Figure 2 and 3

−

8.2

A

−

5.2

A

peak drain current

Figure 3

−

33

A

total power dissipation

−

30

W

storage temperature

−55

+150

°C

operating junction temperature

−55

+150

°C

Source-drain diode

source (diode forward) current (DC)

−

8.2

A

peak source (diode forward) current

−

33

A