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PHX18NQ20T Datasheet(PDF) 2 Page - NXP Semiconductors |
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PHX18NQ20T Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 15 page Philips Semiconductors PHX18NQ20T N-channel FET Product specification Rev. 01 — 28 August 2000 2 of 15 9397 750 07452 © Philips Electronics N.V. 2000. All rights reserved. 5. Quick reference data 6. Limiting values Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj =25to150 °C − 200 V ID drain current (DC) Ths =25 °C; VGS =10V − 8.2 A Ptot total power dissipation Ths =25 °C − 30 W Tj junction temperature − 150 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 8 A; Tj =25 oC 130 180 m Ω VGS = 10 V; ID = 8 A; Tj = 150 °C − 450 m Ω Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =25to150 °C − 200 V VDGR drain-gate voltage (DC) Tj =25to150 °C; RGS =20kΩ− 200 V VGS gate-source voltage (DC) −±20 V ID drain current (DC) Ths =25 °C; VGS =10V; Figure 2 and 3 − 8.2 A Ths = 100 °C; VGS =10V; Figure 2 − 5.2 A IDM peak drain current Ths =25 °C; pulsed; tp ≤ 10 µs; Figure 3 − 33 A Ptot total power dissipation Ths =25 °C; Figure 1 − 30 W Tstg storage temperature −55 +150 °C Tj operating junction temperature −55 +150 °C Source-drain diode IS source (diode forward) current (DC) Tamb =25 °C − 8.2 A ISM peak source (diode forward) current Tamb =25 °C; pulsed; tp ≤ 10 µs − 33 A |
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