PHX2N50E datasheet(2/8 Pages) PHILIPS

Part #	PHX2N50E

Description	PowerMOS transistors Avalanche energy rated

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

PowerMOS transistors

PHX2N50E

Avalanche energy rated

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

R.M.S. isolation voltage from all

f = 50-60 Hz; sinusoidal

-

2500

V

three terminals to external

waveform;

heatsink

R.H.

≤ 65% ; clean and dustfree

C

isol

Capacitance from T2 to external f = 1 MHz

-

10

-

pF

heatsink

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

R

th j-hs

Thermal resistance junction

with heatsink compound

-

5

K/W

to heatsink

R

th j-a

Thermal resistance junction

-

55

-

K/W

to ambient

ELECTRICAL CHARACTERISTICS

T

j = 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

V

(BR)DSS

Drain-source breakdown

V

GS = 0 V; ID = 0.25 mA

500

-

V

voltage

∆V

(BR)DSS / Drain-source breakdown

V

DS = VGS; ID = 0.25 mA

-

0.1

-

%/K

∆T

j

voltage temperature

coefficient

R

DS(ON)

Drain-source on resistance

V

GS = 10 V; ID = 1 A

-

3.1

5

Ω

V

GS(TO)

Gate threshold voltage

V

DS = VGS; ID = 0.25 mA

2.0

3.0

4.0

V

g

fs

Forward transconductance

V

DS = 30 V; ID = 1 A

0.5

1.3

-

S

I

DSS

Drain-source leakage current V

DS = 500 V; VGS = 0 V

-

1

25

µA

V

DS = 400 V; VGS = 0 V; Tj = 125 ˚C

-

30

250

µA

I

GSS

Gate-source leakage current V

GS = ±30 V; VDS = 0 V

-

10

200

nA

Q

g(tot)

Total gate charge

I

D = 2 A; VDD = 400 V; VGS = 10 V

-

20

25

nC

Q

gs

Gate-source charge

-

2

3

nC

Q

gd

Gate-drain (Miller) charge

-

12

15

nC

t

d(on)

Turn-on delay time

V

DD = 250 V; RD = 120 Ω;

-

10

-

ns

t

r

Turn-on rise time

R

G = 24 Ω

-20

-

ns

t

d(off)

Turn-off delay time

-

60

-

ns

t

f

Turn-off fall time

-

20

-

ns

L

d

Internal drain inductance

Measured from drain lead to centre of die

-

4.5

-

nH

L

s

Internal source inductance

Measured from source lead to source

-

7.5

-

nH

bond pad

C

iss

Input capacitance

V

GS = 0 V; VDS = 25 V; f = 1 MHz

-

236

-

pF

C

oss

Output capacitance

-

40

-

pF

C

rss

Feedback capacitance

-

22

-

pF

December 1998

2

Rev 1.200

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