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PIMT1 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PIMT1 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 2001 Oct 22 3 Philips Semiconductors Product specification PNP general purpose double transistor PIMT1 THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2. CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 208 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor ICBO collector-base cut-off current VCB = −30 V; IE =0 −−100 nA VCB = −30 V; IE = 0; Tj = 150 °C −−10 µA IEBO emitter-base cut-off current VEB = −4 V; IC =0 −−100 nA hFE DC current gain VCE = −6 V; IC = −1 mA 120 − VCEsat collector-emitter saturation voltage IC = −50 mA; IB = −5 mA; note 1 −−200 mV Cc collector capacitance VCB = −12 V; IE =Ie = 0; f = 1 MHz − 2.2 pF fT transition frequency VCE = −12 V; IC = −2 mA; f = 100 MHz 100 − MHz |
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