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AH118-89G Datasheet(PDF) 1 Page - WJ Communication. Inc. |
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AH118-89G Datasheet(HTML) 1 Page - WJ Communication. Inc. |
1 / 8 page Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 8 December 2006 AH118 ¼ Watt, High Linearity InGaP HBT Amplifier Product Features • 60 – 3500 MHz • +24.7 dBm P1dB • +40.5 dBm Output IP3 • 20.4 dB Gain @ 900 MHz • 16.5 dB Gain @ 1900 MHz • +5V Single Positive Supply • Lead-free/Green/RoHS- compliant SOT-89 Package Applications • Final stage amplifiers for Repeaters • Mobile Infrastructure • DBS / WLL / W-LAN • Defense / Homeland Security Product Description The AH118 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance across a broad range with +40.5 dBm OIP3 and +24.7 dBm of compressed 1dB power. The AH118 is available in a lead-free/green/RoHS- compliant SOT-89 package. All devices are 100% RF and DC tested. The AH118 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. Internal biasing allows the AH118 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. Functional Diagram RF IN GND RF OUT GND 1 2 3 4 Function Pin No. Input / Base 1 Output / Collector 3 Ground 2, 4 Specifications (1) Parameter Units Min Typ Max Operational Bandwidth MHz 60 3500 Test Frequency MHz 1900 Gain dB 13.5 16.5 Input Return Loss dB 12 Output Return Loss dB 20 Output P1dB dBm +23 +24.7 Output IP3 (2) dBm +39.5 +40.5 IS-95A Channel Power @ -45 dBc ACPR dBm +18 wCDMA Channel Power @ -45 dBc ACLR, 2140 MHz dBm +16.7 Noise Figure dB 4.3 Operating Current Range mA 140 160 175 Device Voltage V +5 1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Operating Case Temperature -40 to +85 °C Storage Temperature -65 to +150 °C RF Input Power (continuous) +15 dBm Device Voltage +6 V Device Current 220 mA Junction Temperature +250 °C Operation of this device above any of these parameters may cause permanent damage. Typical Performance (3) Parameter Units Typical Frequency MHz 900 1900 2140 S21 - Gain dB 20.4 16.5 16.3 S11 - Input R.L. dB -15 -12 -15 S22 - Output R.L. dB -12 -20 -16 Output P1dB dBm +24.2 +24.7 +24.7 Output IP3 dBm +40 +40.5 +40.5 IS-95A Channel Power @ -45 dBc ACPR, dBm +18.2 +18 wCDMA Channel Power @ -45 dBc ACLR dBm +16.7 Noise Figure dB 4.0 4.3 4.8 Supply Bias +5 V @ 160 mA 3. Typical parameters reflect performance in a tuned application circuit: Vsupply = +5 V, 160 mA, +25 °C Ordering Information Part No. Description AH118-89G High Linearity InGaP HBT Amplifier (lead-free/green/RoHS-compliant SOT-89 package) AH118-89PCB900 900 MHz Evaluation Board AH118-89PCB1900 1900 MHz Evaluation Board AH118-89PCB2140 2140 MHz Evaluation Board |
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