MB84VD2118XEM-70 datasheet(11/52 Pages) SPANSION

Part #	MB84VD2118XEM-70

Description	Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS

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MB84VD2118XEM/2119XEM-70

11

(Continued)

* 1 : The ICC current listed includes both the DC operating current and the frequency dependent component.

*2 : ICC active while Embedded Algorithm (program or erase) is in progress.

*3 : Automatic sleep mode enables the low power mode when address remain stable for 150 ns.

*4 : Applicable for only VCCf applying.

*5 : Embedded Alogorithm (program or erase) is in progress. (@5 MHz)

Parameter

Symbol

Test Conditions

Value

Unit

Min

Typ

Max

Input Low Level

VIL

—

–0.3

—

0.5

V

Input High Level

VIH

—2.4

—

VCC+0.3

V

Voltage for Sector

Protection, and Temporary

Sector Unprotection

(RESET) *4

VID

—

11.5

—

12.5

V

Voltage for Program

Acceleration (WP/ACC) *4

VACC

—8.5

9.0

9.5

V

SRAM Output Low Level

VOL

VCCs = VCCs Min, IOL=4.0 mA

—

0.45

V

SRAM Output High Level

VOH

VCCs = VCCs Min, IOH=–0.5 mA

2.4

—

V

Flash Output Low Level

VOL

VCCf = VCCf Min, IOL=4.0 mA

—

0.4

V

Flash Output High Level

VOH

VCCf = VCCf Min, IOH=–0.5 mA

2.4

—

V

Flash Low VCCf Lock-Out

Voltage

VLKO

—2.3

—

2.5

V

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