MBM29LV160TM90 datasheet(1/57 Pages) SPANSION

Part #	MBM29LV160TM90

Description	FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM

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DS05-20906-3E

FUJITSU SEMICONDUCTOR

DATA SHEET

FLASH MEMORY

CMOS

16 M (2M

×××× 8/1M ×××× 16) BIT

MirrorFlashTM*

MBM29LV160TM/BM 90

s DESCRIPTION

The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words

by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to

be programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for

program or erase operations. The devices can also be reprogrammed in standard EPROM programmers.

The standard MBM29LV160TM/BM offers access times of 90 ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable

(WE), and output enable (OE) controls.

(Continued)

s PRODUCT LINE UP

s PACKAGES

* : MirrorFlashTM is a trademark of Fujitsu Limited.

Notes :

• Programming in byte mode ( × 8) is prohibited.

• Programming to the address that already contains data is prohibited (It is mandatory to erase data prior to

overprogram on the same address) .

Part No.

MBM29LV160TM/BM

90

VCC

3.0 V to 3.6 V

Max Address Access Time

90 ns

Max CE Access Time

90 ns

Max OE Access Time

25 ns

48-pin plastic TSOP (1)

48-ball plastic FBGA

(FPT-48P-M19)

(BGA-48P-M20)

Marking Side

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