Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

SMD 2 isolated

NOTE: SEE DASH# DEFINITION TABLE FOR AVAILABLE

LEAD FORMING CONFIGURATION

SFF25P20S2I

series

25 AMP / 200 Volts

125 mΩ

P-Channel MOSFET

Features:

•

polySi gate cell structure

•

Low ON-resistance

•

UIS (unclamped inductive switching) rated

•

Hermetically Sealed, Isolated Package

•

Low package inductance

•

Stress relief provided by flexible leads –

several options available

•

•

TX TXV S Level screening available

Maximum Ratings

Symbol

Value

Units

Drain - Source Voltage

-200

V

Gate – Source Voltage

±20

V

Max. Continuous Drain Current

25

A

Max. Instantaneous Drain Current (Tj limited)

95

A

Max. Avalanche current

25

A

Repetitive Avalanche Energy

30

mJ

Total Power Dissipation

250

W

Operating & Storage Temperature

-55 to +150

ºC

Maximum Thermal Resistance

Junction to Case

0.5

ºC/W

Symbol

Min

Typ Max

Units

Drain to Source Breakdown Voltage

200

––

––

V

Drain to Source On State Resistance

––

––

110

125

120

––

mΩ

Gate Threshold Voltage

3.0

––

5.0

V

Gate to Source Leakage

––

––

±100

nA

Zero Gate Voltage Drain Current

––

––

––

––

25

1

µA

mA

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0009A

DOC