XRD87L75

4

Rev. 1.00

ELECTRICAL CHARACTERISTICS TABLE (CONT'D)

UNLESS OTHERWISE SPECIFIED: AV

V

25°C

Parameter

Symbol

Min

Typ

Max

Units

Test Conditions/Comments

ACPARAMETERS

Differential Gain Error

d

G

2

%

FS = 4 x NTSC

Differential Phase Error

d

PH

1

Degree

FS = 4 x NTSC

POWER SUPPLIES

Operating Voltage (AV

9

V

DD

3

3.3

3.6

V

Current (AGND + DGND)

I

DD

8

12

mA

Does not include ref. current

NOTES

1. The difference between the measured and the ideal code width (V

voltage (Figure 4). Accuracy is a function of the sampling rate (FS).

2. Guaranteed, not tested.

3. Specified values guarantee functionality. Refer to other parameters for accuracy.

4. –1dB bandwidth is a measure of performance of the A/D input stage (S/H + amplifier). Refer to other parameters for accuracy within the specified bandwidth.

5. See V

6. All inputs have diodes to DV

7. t

8. Depends on the RC load connected to the output pin.

9. AGND & DGND pins are connected through the silicon substrate. Connect together at the package and to the analog ground plane.

Specifications are subject to change without notice

V

V

V

IN

..................................... V

All Inputs ............................ V

All Outputs ......................... V

Storage Temperature .........................–65 to +150°C

Lead Temperature (Soldering 10 seconds) ... +300°C

Package Power Dissipation Rating @ 75°C

PDIP, SOIC, SSOP .............................. 650mW

Derates above 75°C ............................. 9mW/°C

NOTES:

1. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation at or above this specification

is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

2. Any input pin which can see a value outside the absolute maximum ratings should be protected by Schottky diode clamps (HP5082-2835) from input pin to the supplies. All inputs have protection

diodes which will protect the device from short transients outside the supplies of less than 100

µA for less than 100ms.

3. V