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10A05-T3 Datasheet(PDF) 1 Page - Won-Top Electronics |
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10A05-T3 Datasheet(HTML) 1 Page - Won-Top Electronics |
1 / 4 page 10A05 – 10A10 1 of 4 © 2006 Won-Top Electronics Pb 10A05 – 10A10 10A STANDARD DIODE Features ! Diffused Junction ! Low Forward Voltage Drop ! High Current Capability A B A ! High Reliability ! High Surge Current Capability Mechanical Data C ! Case: P-600, Molded Plastic D ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 2.1 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol 10A05 10A1 10A2 10A4 10A6 10A8 10A10 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current (Note 1) @TA = 50°C IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 600 A Forward Voltage @IF = 10A VFM 1.0 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 10 100 µA Typical Junction Capacitance (Note 2) Cj 150 80 pF Typical Thermal Resistance Junction to Ambient (Note 1) RJA 10 °C/W Operating Temperature Range Tj -50 to +150 °C Storage Temperature Range TSTG -50 to +150 °C Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. WTE POWER SEMICONDUCTORS P-600 Dim Min Max A 25.4 — B 8.60 9.10 C 1.20 1.30 D 8.60 9.10 All Dimensions in mm |
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