Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

SDR1

__ __ __

__ = Not Screened

TX = TX Level

TXV = TXV

S = S Level

│

│

│

│

│

│

SM = Surface Mount Round Tab

SMM = Surface Mount Mini

SMS = Surface Mount Square Tab

│

│

│

│

│

│

│

│

│

│

J = 600 V

B = 100 V

K = 800 V

D = 200 V

M = 1000 V

G = 400 V

SDR1ASM, SMM, & SMS

thru

SDR1MSM, SMM, & SMS

1.0 AMPS

50 ─ 1000 VOLTS

50 – 70 nsec ULTRA FAST RECTIFIER

FEATURES:

•

Ultra Fast Recovery: 50-70 ns Max @ 25

80-120 ns Max @ 100

•

Single Chip Construction

•

PIV to 1000 Volts (1200V Version available

•

Low Reverse Leakage Current

•

Hermetically Sealed

•

For High Efficiency Applications

•

Available in Round, Mini, and Square Tab

Versions

•

Metallurgically Bonded

•

TX, TXV, and S-Level Screening Available

2/

RATING

SYMBOL

VALUE

UNIT

Peak Repetitive Reverse Voltage

And

DC Blocking Voltage

SDR1A ..

SDR1B ..

SDR1D ..

SDR1G ..

SDR1J ..

SDR1K ..

SDR1M ..

50

100

200

400

600

800

1000

Volts

Average Rectified Forward Current

1

Amp

Peak Surge Current

(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach

25

Amps

Operating & Storage Temperature

-65 to +175

°

C

Thermal Resistance, Junction to End Tab

SM

SMM

SMS

28

45

35

°

C/W

SM (Round Tab)

SMM (Mini)

SMS (Square Tab)

NOTES:

1/ For Ordering Information, Price, Operating Curves, and Availability-

Contact Factory.

2/ Screened to MIL-PRF-19500.

3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RU0003D

DOC