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Sheet No.: D3-A01801EN

GP2S24J0000F Series

■ Design Considerations

● Design guide

1) Prevention of detection error

To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to

the external light.

2) Distance characteristic

Please refer to Fig.10 (Relative collector current vs. Distance) to set the distance of the photointerrupter

and the object.

This product is not designed against irradiation and incorporates non-coherent IRED.

● Degradation

In general, the emission of the IRED used in photointerrupter will degrade over time.

In the case of long term operation, please take the general IRED degradation (50% degradation over 5

years) into the design consideration.

● Parts

This product is assembled using the below parts.

• Photodetector (qty. : 1)

Category

Material

Maximum Sensitivity

wavelength (nm)

Sensitivity

wavelength (nm)

Response time (μs)

Phototransister

Silicon (Si)

930

700 to 1 200

20

• Photo emitter (qty. : 1)

Category

Material

Maximum light emitting

wavelength (nm)

I/O Frequency (MHz)

Infrared emitting diode

(non-coherent)

Gallium arsenide (GaAs)

950

0.3

• Material

Case

Lead frame

Lead frame plating

Black polyphernylene

42Alloy

SnCu plating