Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

IRHNB3260 Datasheet(PDF) 3 Page - International Rectifier

Part # IRHNB3260
Description  RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRHNB3260 Datasheet(HTML) 3 Page - International Rectifier

  IRHNB3260 Datasheet HTML 1Page - International Rectifier IRHNB3260 Datasheet HTML 2Page - International Rectifier IRHNB3260 Datasheet HTML 3Page - International Rectifier IRHNB3260 Datasheet HTML 4Page - International Rectifier IRHNB3260 Datasheet HTML 5Page - International Rectifier IRHNB3260 Datasheet HTML 6Page - International Rectifier IRHNB3260 Datasheet HTML 7Page - International Rectifier IRHNB3260 Datasheet HTML 8Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 3 / 8 page
background image
www.irf.com
3
Pre-Irradiation
IRHNB7260
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads (Si)1
300 - 1000K Rads (Si)2
Units
Test Conditions
Min
Max
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
200
200
V
VGS = 0V, ID = 1.0mA
VGS(th)
Gate Threshold Voltage
2.0
4.0
1.25
4.5
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
100
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
-100
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
25
50
µA
VDS=160V, VGS =0V
RDS(on)
Static Drain-to-Source
0.070
0.110
VGS = 12V, ID =27A
On-State Resistance (TO-3)
RDS(on)
Static Drain-to-Source
0.070
0.110
VGS = 12V, ID =27A
On-State Resistance (SMD-3)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHNB7260
2. Part numbers IRHNB3260, IRHNB4260 and IRHNB8260
Fig a. Single Event Effect, Safe Operating Area
VSD
Diode Forward Voltage
1.8
1.8
V
VGS = 0V, IS = 43A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
0
50
100
150
200
0
-5
-10
-15
-20
VGS
Cu
Br
n
o
I
T
E
L
)
)
²
m
c
/
g
m
(
/
V
e
M
y
g
r
e
n
E
)
V
e
M
(
e
g
n
a
R
)
m
µ
(
)
V
(
S
D
V
V
0
=
S
G
V
@V
5
-
=
S
G
V
@V
0
1
-
=
S
G
V
@V
5
1
-
=
S
G
V
@V
0
2
-
=
S
G
V
@
u
C8
25
8
23
40
9
10
8
10
7
15
2
1
r
B8
.
6
35
0
39
30
0
10
0
10
0
10
5


Similar Part No. - IRHNB3260

ManufacturerPart #DatasheetDescription
logo
International Rectifier
IRHNB3160 IRF-IRHNB3160 Datasheet
101Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
IRHNB3Z60 IRF-IRHNB3Z60 Datasheet
119Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
More results

Similar Description - IRHNB3260

ManufacturerPart #DatasheetDescription
logo
International Rectifier
IRHNB7Z60 IRF-IRHNB7Z60 Datasheet
119Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
IRHNB7064 IRF-IRHNB7064 Datasheet
120Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
IRHNB7264SE IRF-IRHNB7264SE Datasheet
239Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
IRHNB7360SE IRF-IRHNB7360SE Datasheet
240Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
IRHNB7160 IRF-IRHNB7160 Datasheet
101Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
IRHNB7460SE IRF-IRHNB7460SE Datasheet
242Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
IRHNJ57230 IRF-IRHNJ57230 Datasheet
127Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ57130 IRF-IRHNJ57130 Datasheet
130Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNM57110 IRF-IRHNM57110 Datasheet
226Kb / 10P
   RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2)
IRHNA67260 IRF-IRHNA67260 Datasheet
141Kb / 8P
   RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)
More results


Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com