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IRHNJ7330SE, JANSR2N7465U3

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

Fig a. Single Event Effect, Safe Operating Area

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

For footnotes refer to the last page

Parameter

100K Rads (Si)

Units

Test Conditions

ˆ

Min

Max

Drain-to-Source Breakdown Voltage

400

—

V

Gate Threshold Voltage

2.0

4.5

Gate-to-Source Leakage Forward

—

100

nA

Gate-to-Source Leakage Reverse

—

-100

Zero Gate Voltage Drain Current

—

50

µA

Static Drain-to-Source

„

On-State Resistance (TO-3)

—

1.39

Ω

Static Drain-to-Source

„

Diode Forward Voltage

„

—

1.2

V

On-State Resistance (SMD-0.5)

—

1.39

Ω

Ion

LET

Energy

Range

V

DS

(V)

(MeV)

(µm)

@V

@V

@V

@V

Cu

28

285

43

325

325

325

325

Br

36.8

305

39

325

325

325

275

0

50

100

150

200

250

300

350

0

-5

-10

-15

-20

VGS

Cu

Br