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SI4420DY Datasheet(PDF) 6 Page - NXP Semiconductors |
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SI4420DY Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page Philips Semiconductors Si4420DY N-channel enhancement mode field-effect transistor Product data Rev. 01 — 28 May 2001 6 of 12 9397 750 08239 © Philips Electronics N.V. 2001. All rights reserved. Tj =25 °C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. ID = 250 µA; VDS =VGS Tj =25 °C; VDS =5V Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03ae57 0 0.01 0.02 0 1020 3040 50 ID (A) RDSon ( Ω) Tj = 25 ºC 4 V VGS =10 V 03ad57 0 0.4 0.8 1.2 1.6 2 -60 0 60 120 180 Tj (ºC) a a R DSon R DSon 25 C ° () ---------------------------- = 03aa33 0 0.5 1 1.5 2 2.5 -60 0 60 120 180 Tj ( oC) VGS(th) (V) 03aa36 10-6 10-5 10-4 10-3 10-2 10-1 0 0.5 1 1.5 2 2.5 3 VGS (V) ID (A) max typ min |
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