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TDA1302T Datasheet(PDF) 6 Page - NXP Semiconductors |
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TDA1302T Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 18 page TDA1302_1 7 Wed Sep 14 13:30:56 1994 September 1994 7 Philips Semiconductors Preliminary specification Data amplifier and laser supply circuit for CD player and read only optical systems TDA1302T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). HANDLING Classification A: human body model; C = 100 pF; R = 1500 Ω; V = ± 2000 V. Charge device model: C = 200 pF; L = 2.5 µH; R = 0 Ω; V = 250 V. THERMAL RESISTANCE QUALITY SPECIFICATION In accordance with “SNW-FQ-611 part E”. The numbers of the quality specification can be found in the “Quality Reference Handbook”. The handbook can be ordered using the code 9398 510 63011. CHARACTERISTICS VDD = 3.4 V; VDDL = 2.5 V; Tamb = 25 °C; RADJ = 48 kΩ; HG = logic 1; LS = logic 1; with an external LP filter (Rext = 750 Ω, Cext = 47 pF) at pin 9; unless otherwise specified. SYMBOL PARAMETER MIN. MAX. UNIT VDD supply voltage − 8.0 V Ptot total power dissipation − 300 mW Tstg storage temperature −65 +150 °C Tamb operating ambient temperature −40 +85 °C SYMBOL PARAMETER THERMAL RESISTANCE Rth j-a from junction to ambient in free air 60 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply IDD amplifier supply current laser OFF − 8 − mA VDD amplifier supply voltage 3.4 − 5.5 V VDDL laser control supply voltage 2.5 − 5.5 V Pdiss power dissipation laser OFF; VDD = 3.4 V − 27 − mW Diode current amplifiers (1 to 6) Ii(d) diode input current note 1 − − 10 µA Neq equivalent noise input − 1 − pA/ √Hz Vi(d) diode input voltage Ii(d) = 1.67 µA − 0.9 − V Vo(d) diode output voltage −0.2 − VDD − 1 V Gdn amplification Ii(d) = 1.67 µA; Vo(dn) = 0 V; note 2 1.43 1.55 1.67 dB Ios(d) diode output offset current Icsin = Itsin = 0; note 3 − − 100 nA Zo(d) output impedance Idi = 1.67 µA; Vo(dn) = 0 V 500 − − k Ω B 3 dB bandwidth Ii(d) = 1.67 µA 50 68 − kHz Gmm mismatch in amplification Idi = 1.67 µA; Vo(dn) = Vo(dm) − − 3 % |
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