DYNAMIC CHARACTERISTICS

APT6011B2VR_LVR

Symbol

R

θJC

R

θJA

MIN

TYP

MAX

0.20

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMALCHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Reverse Recovery Time (I

Reverse Recovery Charge (I

UNIT

Amps

Volts

ns

µC

V/ns

MIN

TYP

MAX

49

196

1.3

760

18.4

8

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

T

APT Reserves the right to change, without notice, the specifications and information contained herein.

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Test Conditions

V

V

f = 1 MHz

V

V

I

V

V

I

R

MIN

TYP

MAX

8900

1100

500

450

50

200

17

16

65

6

UNIT

pF

nC

ns

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

t1

t2

SINGLE PULSE

1.0

RECTANGULARPULSEDURATION(SECONDS)

FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION

0.25

0.20

0.15

0.10

0.05

0

0.5

0.1

0.3

0.7

0.9

0.05