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6507A Datasheet(PDF) 1 Page - Microsemi Corporation |
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6507A Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 2 page  Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 Copyright © 2007 3-27-2007 S C O T TS DALE DIVISION 6507A DESCRIPTION APPEARANCE These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to ground (see figure 1). This circuit application is further complimented by the 1N6506 (separate data sheet) that has a common cathode. An external TVS diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. They may also be used in fast switching core-driver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arrays offer many advantages of integrated circuits such as high-density packaging and improved reliability. This is a result of fewer pick and place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in PC board mounting. 14-PIN Ceramic DIP IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS • Hermetic Ceramic Package • Isolated Diodes to Eliminate Cross-Talk Voltages • High Breakdown Voltage VBR > 60 V at 10 μA • Low Leakage IR< 100nA at 40 V • Low Capacitance C < 8.0 pF • Options for screening in accordance with MIL-PRF- 19500/474 for JAN, JANTX, JANTXV, and JANS are available by adding MQ, MX, MV, or SP prefixes respectively to part numbers. For example, designate MX6507A for a JANTX screen. • High Frequency Data Lines • RS-232 & RS-422 Interface Networks • Ethernet: 10 Base T • Computer I/O Ports • LAN • Switching Core Drivers • IEC 61000-4 Compatible (see circuit in figure 1) 61000-4-2 ESD: Air 15 kV, contact 8 kW 61000-4-4 (EFT): 40 A – 5/50 ns 61000-4-5 (surge): 12 A 8/20 μs MAXIMUM RATINGS MECHANICAL AND PACKAGING • VBR Reverse Breakdown Voltage 60 V min (Notes 1 & 2) • IO Continuous Forward Current of 300 mA (Notes 1 & 3) • IFSM Forward Surge Current (tp=1/120 s) 500 mA (Note 1) • 400 mW Power Dissipation per Junction @ 25 oC • 600 mW Power Dissipation per Package @ 25 oC (Note 4) • Operating Junction Temperature range –65 to +150 oC • Storage Temperature range of –65 to +200 oC • 14-PIN Ceramic DIP • Weight 2.05 grams (approximate) • Marking: Logo, part number, date code • Pin #1 to the left of the indent on top of package • Carrier Tubes; 25 pcs (standard) NOTE 1: Each Diode NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20% NOTE 3: Derate at 2.4 mA/ oC above +25oC NOTE 4: Derate at 4.0 mW/ oC above +25oC MAXIMUM FORWARD VOLTAGE VF1 IF = 100 mA (Note 1) MAXIMUM REVERSE CURRENT IR1 VR = 40 V MAXIMUM CAPACITANCE (PIN TO PIN) Ct VR = 0 V F = 1 MHz MAXIMUM FORWARD RECOVERY TIME tfr IF = 500 mA MAXIMUM REVERSE RECOVERY TIME trr IF = IR = 200 mA irr = 20 mA RL = 100 ohms PART NUMBER V μA pF ns ns 6507A 1 0.1 8.0 40 20 NOTE 1: Pulsed: PW = 300 us +/- 50 µs, duty cycle <2%, 90 µs after leading edge. |
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