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APT8024B2VR Datasheet(PDF) 1 Page - Advanced Power Technology |
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APT8024B2VR Datasheet(HTML) 1 Page - Advanced Power Technology |
1 / 4 page MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. G D S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • Avalanche Energy Rated • Faster Switching • Lower Leakage POWER MOS V® MOSFET APT8024B2VR APT8024LVR 800V 33A 0.240Ω Ω Ω Ω Ω CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Characteristic / Test Conditions Drain-Source Breakdown Voltage (V GS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (V GS = 10V, ID = 16.5A) Zero Gate Voltage Drain Current (V DS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (V DS = 640V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (V GS = ±30V, VDS = 0V) Gate Threshold Voltage (V DS = VGS, ID = 2.5mA) Symbol V DSS I D I DM V GS V GSM P D T J,TSTG T L I AR E AR E AS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS R DS(on) I DSS I GSS V GS(th) UNIT Volts Ohms µA nA Volts MIN TYP MAX 800 0.240 25 250 ±100 24 APT8024B2VFR_LVFR 800 33 132 ±30 ±40 625 5.00 -55 to 150 300 33 50 3000 T-MAX™ TO-264 B2VR LVR |
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