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APT40N60JCU3 Datasheet(PDF) 3 Page - Microsemi Corporation |
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APT40N60JCU3 Datasheet(HTML) 3 Page - Microsemi Corporation |
3 / 8 page APT40N60JCU3 www.microsemi.com 3 - 8 Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF = 30A 1.6 1.8 IF = 60A 1.9 VF Diode Forward Voltage IF = 30A Tj = 125°C 1.4 V VR = 600V Tj = 25°C 250 IRM Maximum Reverse Leakage Current VR = 600V Tj = 125°C 500 µA CT Junction Capacitance VR = 200V 44 pF Reverse Recovery Time IF=1A,VR=30V di/dt =100A/µs Tj = 25°C 23 Tj = 25°C 85 trr Reverse Recovery Time Tj = 125°C 160 ns Tj = 25°C 4 IRRM Maximum Reverse Recovery Current Tj = 125°C 8 A Tj = 25°C 130 Qrr Reverse Recovery Charge IF = 30A VR = 400V di/dt =200A/µs Tj = 125°C 700 nC trr Reverse Recovery Time 70 ns Qrr Reverse Recovery Charge 1300 nC IRRM Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs Tj = 125°C 30 A Thermal and package characteristics Symbol Characteristic Min Typ Max Unit CoolMos 0.43 RthJC Junction to Case Thermal Resistance Diode 1.21 RthJA Junction to Ambient (IGBT & Diode) 20 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ,TSTG Storage Temperature Range -55 150 TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m Wt Package Weight 29.2 g Typical CoolMOS Performance Curve Maxim um Effe ctive Trans ient The rm al Im pedance , Junction to Case vs Puls e Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 Re ctangular Puls e Duration (Se conds ) Fig 1, Maximum Effective transient thermal Impe dance, Junction to case vs Pulse Duration |
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