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APT58M50J Datasheet(PDF) 4 Page - Microsemi Corporation

Part # APT58M50J
Description  N-Channel MOSFET
Download  4 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT58M50J Datasheet(HTML) 4 Page - Microsemi Corporation

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31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
SOT-227 (ISOTOP®) Package Outline
ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
0.0506
0.0624
0.118
0.0212
0.180
0.511
Dissipated Power
(Watts)
TJ (°C)
TC (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
Note:
t1 = Pulse Duration
1ms
100ms
Rds(on)
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Scaling for Different Case & Junction
Temperatures:
I
D = ID(TC = 25°C)
*(T
J - TC)/125
DC line
100µs
I
DM
10ms
13µs
100µs
I
DM
100ms
10ms
13µs
Rds(on)
DC line
T
J = 150°C
T
C = 25°C
1ms
T
J = 125°C
T
C = 75°C
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
Figure 11, Transient Thermal Impedance Model
1
10
100
800
1
10
100
800
0.25
0.20
0.15
0.10
0.05
0
300
100
10
1
0.1
300
100
10
1
0.1
APT58M50J


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