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APT6013B2LL Datasheet(PDF) 4 Page - Microsemi Corporation

Part # APT6013B2LL
Description  Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT6013B2LL Datasheet(HTML) 4 Page - Microsemi Corporation

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V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
APT6013B2LL_LLL
1
10
100
600
0
10
20
30
40
50
0
40
80
120
160
200
0.3
0.5
0.7
0.9
1.1
1.3
1.5
172
100
10
1
16
12
8
4
0
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
Crss
Ciss
Coss
VDS=300V
VDS=120V
VDS=480V
10mS
1mS
100µS
TJ =+150°C
TJ =+25°C
20,000
10,000
1,000
100
10
200
100
10
1
I
D = 43A
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 400V
R
G = 5Ω
T
J = 125°C
L = 100µH
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
0
5
10 15 20 25 30
35 40 45 50
V
DD = 400V
R
G = 5Ω
T
J = 125°C
L = 100µH
V
DD = 400V
R
G = 5Ω
T
J = 125°C
L = 100µH
E
ON includes
diode reverse recovery
V
DD = 400V
I
D = 43A
T
J = 125°C
L = 100µH
E
ON includes
diode reverse recovery
120
100
80
60
40
20
0
3000
2500
2000
1500
1000
500
0
100
80
60
40
20
0
2000
1600
1200
800
400
0


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