MH8S64BALD-6 datasheet(1/40 Pages) MITSUBISHI

Part #	MH8S64BALD-6

Description	536,870,912-BIT ( 8,388,608-WORD BY 64-BIT ) Synchronous DYNAMIC RAM

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

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MITSUBISHI

ELECTRIC

536,870,912-BIT ( 8,388,608-WORD BY 64-BIT ) Synchronous DYNAMIC RAM

MH8S64BALD-6

MITSUBISHI LSIs

11/May. /1999

MIT-DS-0317-0.0

DESCRIPTION

APPLICATION

Main memory or graphic memory in computer systems

PRELIMINARY

Some of contents are subject to change without notice.

1

1pin

10pin

11pin

40pin

41pin

84pin

85pin

94pin

95pin

124pin

125pin

168pin

The MH8S64BALD is 8388608 - word x 64-bit Synchronous

DRAM module. This consist of eight industry standard 8M x

8 Synchronous DRAMs in TSOP.

The TSOP on a card edge dual in-line package provides any

application where high densities and large of quantities

memory are required.

This is a socket-type memory module ,suitable for easy

interchange or addition of module.

FEATURES

Type name

5.4ns

(CL = 3)

MH8S64BALD-6

Utilizes industry standard 8M X 8 Synchronous DRAMs in TSOP

package

Single 3.3V +/- 0.3V supply

Max.Clock frequency 133MHz

Fully synchronous operation referenced to clock rising edge

4-bank operation controlled by BA0,BA1(Bank Address)

/CAS latency -2/3(programmable,at buffer mode)

LVTTL Interface

Burst length 1/2/4/8/Full Page(programmable)

Burst type- Sequential and interleave burst (programmable)

Random column access

Burst Write / Single Write(programmable)

Auto precharge / All bank precharge controlled by A10

Auto refresh and Self refresh

4096 refresh cycles every 64ms

Max.

Frequency

Access Time from CLK

[component level]

133MHz

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MH8S64BALD-6 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

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