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APTGF90A60TG Datasheet(PDF) 4 Page - Microsemi Corporation

Part # APTGF90A60TG
Description  Phase leg NPT IGBT Power Module
Download  6 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGF90A60TG Datasheet(HTML) 4 Page - Microsemi Corporation

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APTGF90A60TG
www.microsemi.com
4 - 6
Typical Performance Curve
Output characteristics (VGE=15V)
TJ=-55°C
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
350
012
34
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Output Characteristics (VGE=10V)
TJ=-55°C
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
01
234
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
TJ=-55°C
TJ=-55°C
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
012
345
6789
10
VGE, Gate to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Ic=180A
Ic=90A
Ic=45A
0
1
2
3
4
5
6
7
8
6
8
10
12
14
16
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
Ic=180A
Ic=90A
Ic=45A
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.70
0.80
0.90
1.00
1.10
1.20
-50
-25
0
25
50
75
100 125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
0
20
40
60
80
100
120
140
-50 -25
0
255075 100 125 150
TC, Case Temperature (°C)
DC Collector Current vs Case Temperature
Gate Charge
VCE=120V
VCE=300V
VCE=480V
0
2
4
6
8
10
12
14
16
18
0
50
100
150
200
250
300
350
Gate Charge (nC)
IC = 90A
TJ = 25°C


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