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APTGF300SK120G Datasheet(PDF) 2 Page - Microsemi Corporation

Part # APTGF300SK120G
Description  Buck chopper NPT IGBT Power Module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGF300SK120G Datasheet(HTML) 2 Page - Microsemi Corporation

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APTGF300SK120G
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
500
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
750
µA
Tj = 25°C
3.3
3.9
VCE(sat)
Collector Emitter saturation Voltage
VGE =15V
IC = 300A
Tj = 125°C
4
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 12mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
±1
µA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
21
Coes
Output Capacitance
2.9
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
1.52
nF
Td(on)
Turn-on Delay Time
120
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
310
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 300A
RG = 3Ω
30
ns
Td(on)
Turn-on Delay Time
130
Tr
Rise Time
60
Td(off)
Turn-off Delay Time
360
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 300A
RG = 3Ω
40
ns
Eon
Turn-on Switching Energy
Tj = 125°C
25
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 600V
IC = 300A
RG = 3Ω
Tj = 125°C
15
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
750
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
1000
µA
IF
DC Forward Current
Tc = 70°C
400
A
IF = 400A
2.0
2.5
IF = 800A
2.5
VF
Diode Forward Voltage
IF = 400A
Tj = 125°C
1.8
V
Tj = 25°C
420
trr
Reverse Recovery Time
Tj = 125°C
580
ns
Tj = 25°C
5
Qrr
Reverse Recovery Charge
IF = 400A
VR = 800V
di/dt =800A/µs
Tj = 125°C
21.4
µC


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