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APTGF300SK120G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGF300SK120G Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 5 page APTGF300SK120G www.microsemi.com 2 - 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 500 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 750 µA Tj = 25°C 3.3 3.9 VCE(sat) Collector Emitter saturation Voltage VGE =15V IC = 300A Tj = 125°C 4 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 12mA 4.5 6.5 V IGES Gate – Emitter Leakage Current VGE = ±20V, VCE = 0V ±1 µA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 21 Coes Output Capacitance 2.9 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 1.52 nF Td(on) Turn-on Delay Time 120 Tr Rise Time 50 Td(off) Turn-off Delay Time 310 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 300A RG = 3Ω 30 ns Td(on) Turn-on Delay Time 130 Tr Rise Time 60 Td(off) Turn-off Delay Time 360 Tf Fall Time Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 300A RG = 3Ω 40 ns Eon Turn-on Switching Energy Tj = 125°C 25 Eoff Turn-off Switching Energy VGE = 15V VBus = 600V IC = 300A RG = 3Ω Tj = 125°C 15 mJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 750 IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 1000 µA IF DC Forward Current Tc = 70°C 400 A IF = 400A 2.0 2.5 IF = 800A 2.5 VF Diode Forward Voltage IF = 400A Tj = 125°C 1.8 V Tj = 25°C 420 trr Reverse Recovery Time Tj = 125°C 580 ns Tj = 25°C 5 Qrr Reverse Recovery Charge IF = 400A VR = 800V di/dt =800A/µs Tj = 125°C 21.4 µC |
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