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APTGT50DDA120T3G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGT50DDA120T3G Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 5 page  APTGT50DDA120T3G 2 - 5 www.microsemi.com All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 250 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 500 µA Tj = 25°C 1.4 1.7 2.1 VCE(sat) Collector Emitter saturation Voltage VGE =15V IC = 50A Tj = 125°C 2.0 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 2mA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 3600 Crss Reverse Transfer Capacitance VGE = 0V,VCE = 25V f = 1MHz 160 pF Td(on) Turn-on Delay Time 90 Tr Rise Time 30 Td(off) Turn-off Delay Time 420 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 50A RG = 18Ω 70 ns Td(on) Turn-on Delay Time 90 Tr Rise Time 50 Td(off) Turn-off Delay Time 520 Tf Fall Time Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 18Ω 90 ns Eon Turn-on Switching Energy Tj = 125°C 5 Eoff Turn-off Switching Energy VGE = ±15V VBus = 600V IC = 50A RG = 18Ω Tj = 125°C 5.5 mJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 500 µA IF DC Forward Current Tc = 70°C 60 A IF = 60A 2 2.5 IF = 120A 2.3 VF Diode Forward Voltage IF = 60A Tj = 125°C 1.8 V Tj = 25°C 400 trr Reverse Recovery Time Tj = 125°C 470 ns Tj = 25°C 1200 Qrr Reverse Recovery Charge IF = 60A VR = 800V di/dt =200A/µs Tj = 125°C 4000 nC Er Reverse Recovery Energy IF = 60A VR = 800V di/dt =1000A/µs Tj = 125°C 2.2 mJ |
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