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APTGT75TDU60PG Datasheet(PDF) 1 Page - Microsemi Corporation |
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APTGT75TDU60PG Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 5 page  APTGT75TDU60PG www.microsemi.com 1 - 5 Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 600 V TC= 25°C 100 IC Continuous Collector Current TC= 80°C 75 ICM Pulsed Collector Current TC= 25°C 140 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation TC= 25°C 250 W RBSOA Reverse Bias Safe Operating Area TJ = 150°C 150A @ 550V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com E5/E6 G5 E5 E3/E4 C5 G3 C6 E6 G6 C2 E2 G2 C4 E4 G4 E1 C1 G1 E1/E2 C3 E3 E5 G5 C 5 C 3 G3 E5/E6 E3 E6 G6 C 4 C 6 E4 G4 E1 E1/E2 E3/E4 C 1 G1 G2 E2 C 2 VCES = 600V IC = 75A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability • RoHS Compliant Triple Dual Common Source Trench + Field Stop IGBT® Power Module |
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