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APTGT150DH60TG Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APTGT150DH60TG
Description  Asymmetrical - Bridge Trench Field Stop IGBT Power Module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGT150DH60TG Datasheet(HTML) 1 Page - Microsemi Corporation

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APTGT150DH60TG
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www.microsemi.com
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
VBUS
Q4
OUT2
OUT1
VBUS SENSE
CR3
0/VBUS
G4
E4
NTC2
Q1
CR2
0/VBUS SENSE
NTC1
G1
E1
NTC2
OUT1
OUT2
VBUS
VBUS
SENSE
E1
NTC1
E4
G4
0/VBUS
0/VBUS
SENSE
G1
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC= 25°C
225
IC
Continuous Collector Current
TC= 80°C
150
ICM
Pulsed Collector Current
TC= 25°C
350
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC= 25°C
480
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 150°C
300A @ 550V
VCES = 600V
IC = 150A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT® Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Asymmetrical - Bridge
Trench + Field Stop IGBT®
Power Module


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