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APTGT150DH60TG Datasheet(PDF) 1 Page - Microsemi Corporation |
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APTGT150DH60TG Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 5 page APTGT150DH60TG 1 - 5 www.microsemi.com Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com VBUS Q4 OUT2 OUT1 VBUS SENSE CR3 0/VBUS G4 E4 NTC2 Q1 CR2 0/VBUS SENSE NTC1 G1 E1 NTC2 OUT1 OUT2 VBUS VBUS SENSE E1 NTC1 E4 G4 0/VBUS 0/VBUS SENSE G1 Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 600 V TC= 25°C 225 IC Continuous Collector Current TC= 80°C 150 ICM Pulsed Collector Current TC= 25°C 350 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation TC= 25°C 480 W RBSOA Reverse Bias Safe Operating Area Tj = 150°C 300A @ 550V VCES = 600V IC = 150A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant Asymmetrical - Bridge Trench + Field Stop IGBT® Power Module |
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